Electrical characteristics, Zxsbmr16pt8 – Diodes ZXSBMR16PT8 User Manual
Page 3
ZXSBMR16PT8
Document number: DS33612 Rev. 2 - 2
3 of 6
February 2011
© Diodes Incorporated
ZXSBMR16PT8
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage
V
(BR)R
40 - - V
I
R
= 200
μA
Forward Voltage (Note 4)
V
F
- 305
360
mV
I
F
= 50mA
- 355
410
I
F
= 100mA
- 405
470
I
F
= 250mA
- 485
550
I
F
= 500mA
- 570
660
I
F
= 750mA
- 640
750
I
F
= 1A
- 415 -
I
F
= 500mA, T
A
= 100°C
Reverse Current
I
R
- 6 10
μA
V
R
= 30V
- 370 -
V
R
= 30V, T
A
= 85°C
Diode Capacitance
C
D
- 16 - pF
f = 1MHz, V
R
= 30V
Reverse
Recovery
Time
trr - 3 - ns
Switched from I
F
= 100mA to
I
R
= 100mA
Measured @ I
R
= 10mA
di/dt = 500mA/ns.
R
source
= 6
Ω; R
load
= 10
Ω
Reverse Recovery Charge
Q
rr
- 210 - pC
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle ≤ 2%.