Diodes ZDT1049 - Manual

SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 – JANUARY 1996
PARTMARKING DETAIL – T1049
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
25 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
20 A
Continuous Collector Current I
C
5 A
Base Current I
B
500 mA
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
P
tot
2.25
2.75
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT1049
SM-8
(8 LEAD SOT223)
C 1
C 1
C 2
C 2
B 1
E 1
B 2
E 2
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