Diodes ZDT6718 - Manual

SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL – T6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
CBO
20 -20 V
Collector-Emitter Voltage V
CEO
20 -20 V
Emitter-Base Voltage V
EBO
5 -5 V
Peak Pulse Current I
CM
6 -6 A
Continuous Collector Current I
C
2 -1.5 A
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
P
tot
2
2.5
W
W
Derate above 25°C*
Any single die “on”
Both die “on” equally
16
20
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
62.5
50
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
ZDT6718
C 1
C 1
C 2
C 2
B 1
E 1
B 2
E 2
NPN
PNP
3 - 372
SM-8
(8 LEAD SOT223)