Diodes ZDT1048 - Manual

Issue 2 - December 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZDT1048
SM-8 Dual NPN medium power high gain transistors
Summary
BV
CEO
> 17.5V
I
C(cont)
= 5A
V
CE(sat)
< 75mV @ 1A
P
D
= 2.75W
Description
Advanced process capability has been used to achieve
this high performance device. Combining two NPN
transistors in the SM-8 package provides a compact
solution for the intended applications.
Features
• Dual NPN device
• Very low saturation voltage
• High gain
• SM 8 package
Applications
• CCFL invertors
• Royer circuits
Ordering information
Device marking
T1048
DEVICE Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZDT1048TA 7 12 1000
C1
E1
B1
C2
E2
B2