Diodes ZTX618 - Manual

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h
FE
characteristics up to10A (pulsed)
* Extremely low saturation voltage e.g. 7mV typ.
* I
C
cont 3.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
10 A
Continuous Collector Current I
C
3.5 A
Base Current I
B
500 mA
Practical Power Dissipation* P
totp
1.5 W
Power Dissipation P
tot
1 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX618 ZTX618
C
B
E
E-Line
TO92 Compatible
D=1(D.C.)
D=0.2
D=0.1
D=0.05
D=0.5
Single Pulse
D=t1
tP
t1
tP
Transient Thermal Resistance
Pulse Width
0.1ms
20
60
100
140
180
1ms 10ms 100ms 10s 100s 1s
160
120
80
40
0
Derating curve
T -Temperature (° C)
M
ax
P
ow
er
Di
ssi
pat
ion
- (W
at
ts)
-40
0.50
0.25
1.0
0.75
0 40 80 120 200 160
Am
bie
nt tem
per
atur
e
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:
Junction to Ambient
1
Junction to Ambient
2
R
th(j-amb)1
R
th(j-amb)2
†
175
116
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
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
Zetex plc 1997
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
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