Diodes ZTX749 - Manual

PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-35 V
Collector-Emitter Voltage V
CEO
-25 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-2 A
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j:
T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35 V I
C
=-100 µ A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-25 V I
C
=-10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A, I
C
=0
Collector Cut-Off
Current
I
CBO
-0.1
-10
µ A
µ A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V, I
E
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.23
-0.3
-0.5
V
V
I
C
=1A, I
B
=-100mA*
I
C
=2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 -1.25 V I
C
=1A, I
B
=-100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 -1 V IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
100
75
15
200
200
150
50
300
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX749
3-254
C
B
E
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax Po
we
r D
is
sipat
io
n
- (
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
rm
a
l R
esis
ta
nce (
°C/
W
)
10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t 1
t P
D=t 1 /t P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
ZTX749
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition
Frequency
f
T
100 160 MHz I
C
=-100mA,
V
CE
=-5V f=100MHz
Output Cpacitance C
obo
55 100 pF V
CB
=-10V f=1MHz
Switching Times t
on
40 ns I
C
=-500mA,
V
CC
=-10V
I
B1
=I
B2
=-50mA t
off
450 ns
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
3-255