Diodes ZTX718 - Manual

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 4– MAY 1998
FEATURES
* 6A Peak pulse current
* Excellent h
FE
characteristics up to 6A (pulsed)
* low saturation voltage
* I
C
Cont 2.5A
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX618
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-20 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-2.5 A
Base Current I
B
-500 mA
Practical Power Dissipation* P
totp
1.5 W
Power Dissipation at T
amb
=25°C P
tot
1 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX718
C
B
E
E-Line
TO92 Compatible