Diodes ZTX788A - Manual

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 – SEPTEMBER 94
FEATURES
* 15 Volt V
CEO
* Gain of 200 at I
C
=2 Amps
* Very low saturation voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-20 V
Collector-Emitter Voltage V
CEO
-15 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-10 A
Continuous Collector Current I
C
-3 A
Practical Power Dissipation* P
totp
1.5 W
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20 -30 V I
C
=-100 µ A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-15 -20 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 -8.5 V I
E
=-100 µ A
Collector Cut-Off Current I
CBO
-0.1
-10
µ A
µ A
V
CB
=-10V
V
CB
=-10V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-0.025
-0.25
-0.28
-0.035
-0.32
-0.33
V
V
V
I
C
=-0.1A, I
B
=-2mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.85 -1.0 V I
C
=-2A, I
B
=-20mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.8 V IC=-2A, V
CE
=-3V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
80
800 I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-10A, V
CE
=-2V*
E-Line
TO92 Compatible
ZTX788A
3-271
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
T
100 150 MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Output Capacitance C
obo
30 60 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
40
500
ns
ns
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
†
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX788A
-40 0.0001
Derating curve
T -Temperature (°C)
M
ax Po
we
r D
is
sipat
io
n
- (
W
a
tts)
Maximum transient thermal impedance
Pulse Width (seconds)
T
h
e
rm
a
l R
esis
ta
nce (
°C/
W
)
10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t 1
t P
D=t 1 /t P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperat
ure
0
D=1 (D.C.)
3-272