Diodes ZTX1049A - Manual (Page 3)

ZTX1049A
Document number: DS33327 Rev. 5 - 2
3 of 6
www.diodes.com
May 2013
© Diodes Incorporated
ZTX1049A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
80 120 — V I
C
= 100µA
Collector-Emitter Breakdown Voltage BV
CES
80 120 — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
25 30 — V I
C
= 10mA
Collector-Emitter Breakdown Voltage BV CEV
80 120 — V I C = 100µA, V EB = 1V
Emitter-Base Breakdown Voltage BV
EBO
5 8.75 — V I
E
= 100µA
Collector Cut-off Current I
CBO
— 0.3 10 nA V
CB
= 50V
Collector Emitter Cut-off Current I CES
— 0.3 10 nA V CES = 50V
Emitter Cut-off Current I
EBO
— 0.3 10 nA V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
—
30
60
125
155
45
80
180
220
mV
I
C
= 500mA, I
B
= 10mA
I
C
=1A, I
B
= 10mA
I
C
=2A, I
B
= 10mA
I C =4A, I B = 50mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
— 890 950 mV I
C
=4A, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 9) V
BE(on)
— 820 900 mV I
C
= 4A, V
CE
= 2V
DC Current Gain (Note 9) h
FE
250
300
300
200
35
430
450
450
350
70
—
—
1200
—
—
—
I C = 10mA, V CE = 2V
I C = 0.5A, V CE = 2V
I
C
= 1A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
I
C
= 20A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 9) f
T
— 180 — MHz
V
CE
= 10V, I
C
= 50mA
f = 50MHz
Output Capacitance (Note 9) C
obo
— 45 60 pF V
CB
= 10V. f = 1MHz
Turn-On Times t
on
— 125 — ns I
C
= 4A, I
B
= 40mA, V
CC
= 10V
Turn-Off Times t off
— 380 — ns I C = 4A, I B = 40mA, V CC = 10V
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%