Diodes ZUMT617 - Manual

Super323

SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
* I
C
CONT 1.5A
* 5A Peak Pulse Current
* Excellent H
FE
Characteristics Up To 5A (pulsed)
* Extremely Low Equivalent On Resistance; R
CE(sat)
APPLICATIONS
*
DC-DC converter boost functions
* Motor drive functions
DEVICE TYPE COMPLEMENT PARTMARKING R
CE(sat)
ZUMT617 ZUMT717 T61 135m
Ω
at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
15 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current** I
CM
5 A
Continuous Collector Current I
C
1.5 A
Base Current I
B
200 mA
Power Dissipation at T
amb
=25°C* P
tot
385 †
500 ‡ mW
Operating and Storage Temperature
Range T
j
:T
stg
-55 to +150 °C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617