Diodes ZXT11N15DF - Manual (Page 4)

ISSUE 1 - DECEMBER 1999
ZXT11N15DF
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
40 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
15 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
7.5 V I
E
=100 ␮A
Collector Cut-Off Current I
CBO
100 nA V
CB
=32V
Emitter Cut-Off Current I
EBO
100 nA V
EB
=6V
Collector Emitter Cut-Off Current I
CES
100 nA V
CES
=32V
Collector-Emitter Saturation
Voltage V
CE(sat)
7
57
37
110
10
80
55
150
mV
mV
mV
mV I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=150mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.9 1.0 V I
C
=3A, I
B
=150mA*
Base-Emitter Turn-On Voltage V
BE(on)
0.85 1.0 V I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio h
FE
200
300
250
200
150
900
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency f
T
145 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
26 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
110 ns V
CC
=10V, I
C
=3A
I
B1
=I
B2
=30mA
Turn-Off Time t
(off)
220 ns
*Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2%
4