Electrical characteristics – Diodes ZXT10P20DE6 User Manual
Page 4
ZXT10P20DE6
Document Number: DS33625 Rev: 3 - 2
4 of 7
July 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXT10P20DE6
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-20 -65
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-20 -53
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.8
V
I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
<1 -100 nA
V
CB
= -15V
Emitter Cutoff Current
I
EBO
<1 -100 nA
V
EB
= -5V
Collector-Emitter Cutoff Current
I
CES
<1 -100 nA
V
CES
= -15V
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
300 475
I
C
= -10mA, V
CE
= -2V
300 450
I
C
= -0.1A, V
CE
= -2V
150 230
I
C
= -2A, V
CE
= -2V
15 30
I
C
= -6A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
-19 -30
mV
I
C
= -0.1A, I
B
= -10mA
-170 -220
I
C
= -1A, I
B
= -20mA
-190 -250
I
C
= -1.5A, I
B
= -50mA
-240 -350
I
C
= -2.5A, I
B
= -150mA
Base-Emitter Saturation Voltage
V
BE(sat)
-0.97 -1.05 V I
C
= -2.5A, I
B
= -150mA
Base-Emitter Turn-On Voltage
V
BE(on)
-0.85 -0.95 V I
C
= -2.5A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
150 180
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Output Capacitance
C
obo
21 30 pF
V
CB
= -10V, f = 1MHz
Turn-On Time
t
(on)
40
ns
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -20mA
Turn-Off Time
t
(off)
670
ns
Note:
9. Measured under pulsed conditions. Pulse width
300μs. Duty cycle 2%.