Diodes ZXT12P12DX - Manual

ISSUE 1 - MARCH 2000
ZXT12P12DX
SuperSOT4™
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-12V; R
SAT
= 47m ; I
C
= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 12A
•
I
C
=3A Continuous Collector Current
•
MSOP8 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXT12P12DXTA 7 12mm embossed 1000 units
ZXT12P12DXTC 13 12mm embossed 4000 units
DEVICE MARKING
T12P12DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2