Diodes ZXT13P20DE6 - Manual (Page 2)

ZXT13P20DE6
Document Number: DS33638 Rev: 2 - 2
2 of 7
www.diodes.com
December 2013
© Diodes Incorporated
ADVAN
CE I
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RM
ATI
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A Product Line of
Diodes Incorporated
ZXT13P20DE6
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-25 V
Collector-Emitter Voltage V
CEO
-20 V
Emitter-Base Voltage V
EBO
-7.5 V
Base Current I
B
-500 mA
Continuous Collector Current I
C
-3.5 A
Peak Pulse Collector Current I
CM
-10 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
1.1
8.8
W
mW/°C
(Note 6)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
113
°C/W (Note 6) 73
Thermal Resistance, Junction to Lead (Note 7) R
θJL
18.61
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is measured at t  5secs.
7. Thermal resistance from junction to solder-point (at the end of the collector leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.