Diodes ZXT2MA - Manual (Page 4)

ZXT2MA
Document Number: DS35302 Rev. 1 - 2
4 of 7
www.diodes.com
April 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXT2MA
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-25 -35 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 7) BV
CEO
-20 -25 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV EBO
-7.5 -8.5 - V I
E = -100µA
Collector Cutoff Current I
CBO
- - -25 nA V
CB
= -20V
Emitter Cutoff Current I
EBO
- - -25 nA V
EB
= -6V
Collector Emitter Cutoff Current I
CES
- - -25 nA V
CES
= -16V
Static Forward Current Transfer Ratio
(Note 7)
h
FE
300 475 -
-
I
C
= -10mA, V
CE
= -2V
300 450 - I
C
= -100mA, V
CE
= -2V
150 230 - I
C
= -2A, V
CE
= -2V
15 30 - I
C
= -6A, V
CE
= -2V
Collector-Emitter Saturation Voltage
(Note 7)
V CE(sat)
- -19 -30
mV
I
C
=- 0.1A, I
B
= -10mA
- -170 -220 I
C
= -1A, I
B
= -20mA
- -190 -250 I C = -1.5A, I B = -50mA
- -240 -350 I
C
= -2.5A, I
B
= -150mA
- -225 -300 I
C
= -3.5A, I
B
= -350mA
Base-Emitter Turn-On Voltage (Note 7) V BE(on)
- -0.87 -0.95 V I
C = -3.5A, V CE = -2V
Base-Emitter Saturation Voltage (Note 7) V
BE(sat)
- -1.01 -1.075 V I
C
= -3.5A, I
B
= -350mA
Output Capacitance C
obo
- 21 30 pF V
CB
= -10V. f = 1MHz
Transition Frequency f T
150 180 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-On Time t
on
- 40 - ns V CC = -10V, I C = -1A
I
B1
= I
B2
= -10mA Turn-Off Time t
off
- 670 - ns
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%