Electrical characteristics – q2 (pnp transistor) – Diodes ZXTC2061E6 User Manual
Page 5
ZXTC2061E6
Document Number: DS33646 Rev: 2 - 2
5 of 9
February 2013
© Diodes Incorporated
ZXTC2061E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-12 -35 —
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
-12 -25 —
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.4 —
V
I
E
= -100µA, I
C
= 0
Collector Cutoff Current
I
CBO
—
—
< -1
-50
-0.5
nA
µA
V
CB
= -12V
V
CB
= -12V, T
A
= +100°C
Collector Cutoff Current
I
EBO
—
< -1
-50
nA
V
EB
= -5.6V
ON CHARACTERISTICS (Note 12)
DC Current Gain
h
FE
500
290
75
800
450
100
1500
—
—
—
I
C
= -10mA, V
CE
= -2V
I
C
= -1.0A, V
CE
= -2V
I
C
= -3.5A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
—
—
—
—
-55
-170
-220
-150
-70
-265
-360
-200
mV
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -10mA
I
C
= -2.0A, I
B
= -40mA
I
C
= -3.5A, I
B
= -350mA
Base-Emitter Saturation Voltage
V
BE(sat)
—
-955
-1050 mV
I
C
= -3.5A, I
B
= -350mA
Base-Emitter Turn-On Voltage
V
BE(on)
—
-830 -900 mV
I
C
= -3.5A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
—
17 25 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
—
310 —
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Delay Time
t
d
—
41 —
ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -10mA
Rise Time
t
r
—
62 —
ns
Storage Time
t
s
—
179 —
ns
Fall Time
t
f
—
65 —
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.