Zxtd617mc, Maximum ratings, Thermal characteristics – Diodes ZXTD617MC User Manual
Page 2
ZXTD617MC
Document Number DS31930 Rev. 3 - 2
2 of 7
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD617MC
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
15
Emitter-Base Voltage
V
EBO
7
Peak Pulse Current
I
CM
15
A
Continuous Collector Current
(Notes 3 & 6)
I
C
4.5
(Notes 4 & 6)
5
Base Current
I
B
1
Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 3 & 6)
P
D
1.5
12
W
mW/
°C
(Notes 4 & 6)
2.45
19.6
(Notes 5 & 6)
1.13
8
(Notes 5 & 7)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
R
θJA
83.3
°C/W
(Notes 4 & 6)
51.0
(Notes 5 & 6)
111
(Notes 5 & 7)
73.5
Thermal Resistance, Junction to Lead
(Notes 6 & 8)
R
θJL
17.1
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
3. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).