Diodes ZXTN07012EFF - Manual (Page 2)

ZXTN07012EFF
Issue 1 - September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-collector voltage (reverse blocking) V
ECO
3 V
Emitter-base voltage V
EBO
7 V
Continuous collector current (c) I
C
4.5 A
Base current I
B
1 A
Peak pulse current I
CM
10 A
Power dissipation at T
amb
=25°C (a) 0.84 W
Linear derating factor P
D
6.72 mW/°C
Power dissipation at T
amb
=25°C (b) 1.34 W
Linear derating factor P
D
10.72 mW/°C
Power dissipation at T
amb
=25°C (c) 1.50 W
Linear derating factor P
D
12.0 mW/°C
Power dissipation at T
amb
=25°C (d) 2.0 W
Linear derating factor P
D
16.0 mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R
⍜JA
149 °C/W
Junction to ambient (b) R ⍜JA 93 °C/W
Junction to ambient (c) R
⍜JA
83 °C/W
Junction to ambient (d) R ⍜JA 60 °C/W