Diodes ZXTN19020DFF - Manual (Page 2)

ZXTN19020DFF
Issue 1 - February 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
70 V
Collector-emitter voltage (forward blocking) V
CEX
70 V
Collector-emitter voltage (base open) V
CEO
20 V
Emitter-collector voltage (reverse blocking) V
ECO
4.5 V
Emitter-base voltage V
EBO
7 V
Continuous collector current (c) I
C
6.5 A
Base current I
B
1 A
Peak pulse current I
CM
20 A
Power dissipation at T
amb
=25°C (a) P
D
0.84 W
Linear derating factor 6.72 mW/°C
Power dissipation at T
amb
=25°C (b) P
D
1.34 W
Linear derating factor 10.72 mW/°C
Power dissipation at T
amb
=25°C (c) P
D
1.5 W
Linear derating factor 12.0 mW/°C
Power dissipation at T
amb
=25°C (d) P
D
2.0 W
Linear derating factor 16.0 mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to ambient (a) R
⍜JA
149.3 °C
/W
Junction to ambient (b) R ⍜JA 93.4 °C
/W
Junction to ambient (c) R
⍜JA
83.3 °C
/W
Junction to ambient (d) R ⍜JA 60 °C
/W