Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19020DZ User Manual
Page 5
ZXTN19020DZ
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
70
100
V
I
C
= 100
μA
Collector-Emitter
breakdown voltage
(forward blocking)
BV
CEX
70
100
V
I
C
= 100
μA, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Collector-Emitter
breakdown voltage
BV
CEO
20
30
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8.4
V
I
E
= 100
μA, R
BC
≤
1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
4.5
5.7
V
I
E
= 100
μA
Emitter-Base breakdown
voltage
BV
EBO
7.0
8.4
V
I
E
= 100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= 70V
V
CB
= 70V, T
amb
=100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 70V, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
26
50
75
60
83
155
32
70
100
80
105
200
mV
mV
mV
mV
mV
mV
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 10mA
(*)
I
C
= 2A, I
B
= 20mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 4A, I
B
= 400mA
(*)
I
C
= 7.5A, I
B
= 375mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
1000
1100
mV
I
C
= 7.5A, I
B
= 375mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
870
1000
mV
I
C
= 7.5A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
300
260
150
50
450
390
210
75
35
900
I
C
= 100mA, V
CE
= 2V
(*)
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 7.5A, V
CE
= 2V
(*)
I
C
= 15A, V
CE
= 2V
(*)
I
C
= 20A, V
CE
= 2V
(*)
Transition frequency
f
T
160
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
297
400
pF
V
EB
= 0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
32.6
40
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
129
ns
I
C
= 1A, V
CC
= 10V,
I
B1
=-I
B2
= 10mA
Rise time
t
r
96
ns
Storage time
t
s
398
ns
Fall time
t
f
90
ns