Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25015DFH User Manual
Page 4
ZXTN25015DFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown
voltage
BV
CEO
15
22
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
< 1k
⍀
or
0.25v > V
BC
> -0.25V
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECO
4.5
5.3
V
I
E
= 100
A,
Emitter-base breakdown voltage BV
EBO
7
8.2
V
I
E
= 100
A
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 40V
V
CB
= 40V, T
amb
= 100°C
Collector-emitter cut-off current
I
CEX
-
100
nA
V
CE
= 30V; R
BE
< 1k
⍀
or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
30
40
mV
I
C
= 1A, I
B
= 100mA
60
80
mV
I
C
= 1A, I
B
= 10mA
90
125
mV
I
C
= 2A, I
B
= 20mA
125
155
mV
I
C
= 5A, I
B
= 500mA
160
215
mV
I
C
= 5A, I
B
= 100mA
Base-emitter saturation voltage
V
BE(sat)
990
1090
mV
I
C
= 5A, I
B
= 500mA
Base-emitter turn-on voltage
V
BE(on)
805
900
mV
I
C
= 5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
300
400
I
C
= 2A, V
CE
= 2V
150
275
I
C
= 5A, V
CE
= 2V
25
40
I
C
= 15A, V
CE
= 2V
Transition frequency
f
T
150
240
MHz
I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Output capacitance
C
OBO
22.7
30
pF
V
CB
= 10V, f
Delay time
t
(d)
16
ns
V
CC
= 10V. I
C
= 3A, I
B1
=
I
B2
= 50mA.
Rise time
t
(r)
41
ns
Storage time
t
(s)
148
ns
Fall time
t
(f)
23
ns