Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25012EZ User Manual
Page 5
ZXTN25012EZ
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
20
40
V
I
C
= 100
μA
Collector-Emitter
breakdown voltage
BV
CEO
12
17
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8
V
I
E
= 100mA, R
BC
< 1k
Ω
or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
4.5
5.5
V
I
E
= 100
μA
Emitter-Base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= 20V
V
CB
= 20V, T
amb
= 100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 20V, R
BE
< 1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
31
50
70
90
200
38
60
85
130
270
mV
mV
mV
mV
mV
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 40mA
I
C
= 2A, I
B
= 20mA
I
C
= 6.5A, I
B
= 130mA
Base-Emitter saturation
voltage
V
BE(sat)
950
1050
mV
I
C
= 6.5A, I
B
= 130mA
Base-Emitter turn-on
voltage
V
BE(on)
840
950
mV
I
C
= 6.5A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
500
500
185
30
800
750
250
50
1500
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 6.5A, V
CE
= 2V
I
C
= 15A, V
CE
Transition frequency
f
T
260
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
137
250
pF
V
EB
= 0.5V, f
= 1MHz
Output capacitance
C
obo
25
35
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
71
ns
I
C
= 1A, V
CC
= 10V,
I
B1
=-I
B2
= 10mA
Rise time
t
r
70
ns
Storage time
t
s
233
ns
Fall time
t
f
72
ns