Diodes ZXTN617MA - Manual (Page 4)

ZXTN617MA
Document number: DS31888 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN617MA
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV CBO
40 70 - V I C = 100 µA
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
15 18 - V I
C
= 10 mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.2 - V I
E
= 100 µA
Collector Cutoff Current I CBO
- - 100 nA V CB = 30V
Emitter Cutoff Current I
EBO
- - 100 nA V
EB
= 6V
Collector Emitter Cutoff Current I
CES
- - 100 nA V
CES
= 12V
Static Forward Current Transfer Ratio (Note 6) h
FE
200
300
200
150
-
415
450
320
240
80
-
-
-
-
-
-
I
C
= 10mA, V
CE
= 2V
I C = 200mA, V CE = 2V
I
C
= 3A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 12A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 6) V CE(sat)
-
-
-
-
- 8
70
165
240
200
14
100
200
310
-
mV
I
C
=0.1A, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I C = 3A, I B = 50mA
I C =4.5A, I B = 50mA
I
C
=4.5A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 6) V
BE(on)
- 0.88 0.96 V I
C
= 4.5A, V
CE
= 2V
Base-Emitter Saturation Voltage (Note 6) V
BE(sat)
- 0.94 1.05 V I
C
= 4.5A, I
B
= 50mA
Output Capacitance C
obo
- 30 40 pF V
CB
= 10V. f = 1MHz
Transition Frequency f
T
80 120 - MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Turn-On Time t on
- 120 - ns V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 10mA Turn-Off Time t
off
- 160 - ns
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.