Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25020DZ User Manual
Page 5
ZXTN25020DZ
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
100
125
V
I
C
= 100
μA
Collector-Emitter
breakdown voltage
(forward blocking)
BV
CEX
100
120
V
I
C
= 100
μA, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Collector-Emitter
breakdown voltage
BV
CEO
20
35
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8
V
I
E
= 100
μA, R
BC
≤
1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
5.0
6.0
V
I
E
= 100
μA
Emitter-Base breakdown
voltage
BV
EBO
7.0
8.3
V
I
E
= 100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= 100V
V
CB
= 100V, T
amb
=100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 100V, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= -5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
40
60
100
130
100
210
48
75
120
180
120
270
mV
mV
mV
mV
mV
mV
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 20mA
(*)
I
C
= 2A, I
B
= 40mA
(*)
I
C
= 2A, I
B
= 20mA
(*)
I
C
= 3A, I
B
= 300mA
(*)
I
C
= 6A, I
B
= 300mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
1000
1050
mV
I
C
= 6A, I
B
= 300mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
875
950
mV
I
C
= 6A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
300
250
50
450
360
110
15
900
I
C
= 10mA, V
CE
= 2V
(*)
I
C
= 2A, V
CE
= 2V
(*)
I
C
= 6A, V
CE
= 2V
(*)
I
C
= 15A, V
CE
= 2V
(*)
Transition frequency
f
T
215
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
152
pF
V
EB
= 0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
16.5
25
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
67.7
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 10mA
Rise time
t
r
72.2
ns
Storage time
t
s
361
ns
Fall time
t
f
63.9
ns