Diodes ZXTN26020DMF - Manual (Page 2)

ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
2 of 6
www.diodes.com
September 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
20 V
Collector-Emitter Voltage V
CEO
20 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current (Note 4) I
C
1.5 A
Peak Pulse Current I
CM
4 A
Base Current I
B
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
1 W
Power Dissipation (Note 4) P
D
380 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25
°C
R θJA 125 °C/W
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25 °C
R θJA 330 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150
°C
Notes: 3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
0
0.2
0.4
0.6
0.8
1.0
1.2
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DI
SS
IP
A
T
IO
N (
W
)
D
Note 3
Note 4
0.1
1
10
100
1,000
Single Pulse
0.00001 0.001 0.1 10 1,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 328°C/W
θ
θ
JA
JA
P
(p
k
),
P
EAK
T
R
A
N
SI
E
N
T
P
O
WE
R
(W
)
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 328°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1