Diodes ZTX549A - Manual

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-35 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-35 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30 V I
C
=-10mA
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cut-Off Current I
CBO
-0.1
-10
µ A
µ A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25
-0.50
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
ZTX549A -0.30 V I
C
=-100mA, I
B
=-1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 -1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(on)
-0.85 -1 V IC=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
70
80
40
200
130
80
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
ZTX549 100 160 300 I
C
=-500mA, V
CE
=-2V*
ZTX549A 150 200 500 I
C
=-500mA, V
CE
=-2V*
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
ZTX549
ZTX549A
3-191
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
T
100 MHz I
C
=-100mA, V
CE
=-5V
f=100MHz
Output Capacitance C
obo
25 pF V
CB
=-10V, f=1MHz
Switching Times t
on
300 ns I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
t
off
50 ns
C
B
E
E-Line
TO92 Compatible
ZTX549
ZTX549A
3-192