Diodes ZX5T3Z - Manual (Page 2)

ZX5T3Z
Da
tasheet Number: DS33419 Rev. 2 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZX5T3Z
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Limit Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Base Voltage V CBS
-50 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V EBO
-7.5 V
Continuous Collector Current I
C
-5.5 A
Peak Pulse Current I
CM
-15 A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
0.9
W
(Note 7) 1.5
(Note 8) 2.1
(Note 9) 3.0
Thermal Resistance, Junction to Ambient Air
(Note 6)
R θJA
139
C/W
(Note 7) 83
(Note 8) 60 
(Note 9) 42 
Thermal Resistance, Junction to Lead (Note 10) R θJL 2.81 C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 C
ESD Ratings
(Note 11)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
9. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper and measured at t<5secs.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.