Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXT10P40DE6 User Manual
Page 4
ISSUE 1 - SEPTEMBER 2000
ZXT10P40DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-40
-80
V
I
C
=-100
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-40
-70
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
-8.8
V
I
E
=-100
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-35V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-35V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-25
-150
-195
-210
-40
-220
-300
-300
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.95
-1.00
V
I
C
=-2A, I
B
=-200mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.85
-0.95
V
I
C
=-2A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
180
60
12
480
450
290
130
22
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-1.5A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency
f
T
150
190
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
19
25
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
40
ns
V
CC
=-15V, I
C
=-0.75A
I
B1
=I
B2
=-15mA
Turn-Off Time
t
(off)
435
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
4