Diodes ZXT12P40DX - Manual

ISSUE
2 - DECEMBER 2006
ZXT12P40DX
SuperSOT4™
DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-40V; R
SAT
= 75m ; I
C
= -2A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 5A
•
I
C
=2A Continuous Collector Current
•
MSOP8 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXT12P40DXTA 7 12mm embossed 1000 units
ZXT12P40DXTC 13 12mm embossed 4000 units
DEVICE MARKING
T12P40DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2