Electrical characteristics – Diodes ZXT13N50DE6 User Manual
Page 4
ZXT13N50DE6
Document Number: DS33636 Rev: 3 - 2
4 of 7
April 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXT13N50DE6
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
100 190 — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
50 70 — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7.5 8.5 — V
I
E
= 100µA
Collector-Base Cutoff Current
I
CBO
— — 100 nA
V
CB
= 80V
Emitter Cutoff Current
I
EBO
— — 100 nA
V
EB
= 6V
Collector-Emitter Cutoff Current
I
CES
— — 100 nA
V
CES
= 80V
ON CHARACTERISTICS (Note 10)
DC Current Gain
h
FE
250 400 —
—
I
C
= 10mA, V
CE
= 2V
300 450 900
I
C
= 1A, V
CE
= 2V
100 220 —
I
C
= 4A, V
CE
= 2V
10 30 —
I
C
= 10A, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
— 8
12
mV
I
C
= 100mA, I
B
= 10mA
— 75 100
I
C
= 1A, I
B
= 10mA
— 150 200
I
C
= 3A, I
B
= 50mA
— 175 230
I
C
= 4A, I
B
= 100mA
— 145 180
I
C
= 4A, I
B
= 400mA
Base-Emitter Saturation Voltage
V
BE(sat)
— —
1.0 V
I
C
= 4A, I
B
= 100mA
Base-Emitter Turn-On Voltage
V
BE(on)
— —
0.9 V
I
C
= 4A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
—
115 — MHz
V
CE
= 10V, I
C
= 50mA, f = 50MHz
Output Capacitance
C
obo
— 31 — pF
V
CB
= 10V, f = 1MHz
Turn-On Time
t
(on)
— 220 — ns
V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 20mA
Turn-Off Time
t
(off)
— 830 — ns
Note:
10. Measured under pulsed conditions. Pulse width
300μs. Duty cycle 2%.