Electrical characteristics – q1 (npn transistor), Electrical characteristics – q2 (pnp transistor) – Diodes ZXTC2045E6 User Manual
Page 4
ZXTC2045E6
Document Number: DS33645 Rev: 2 - 2
4 of 6
November 2012
© Diodes Incorporated
ZXTC2045E6
ADVAN
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ATI
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Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
40 -
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEV
40 -
⎯
V
I
C
= 1
μA, 0.25V > V
BE
> 1.0V
Collector-Emitter Breakdown Voltage (Note 13)
BV
CEO
30 -
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
7 8.3
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
<1 20 nA
V
CB
= 32V
Collector Cutoff Current
I
CES/R
⎯
<1 20 nA
V
CE
= 16V, R
≤ 1kΩ
Emitter Cutoff Current
I
EBO
⎯
<1 20 nA
V
EB
= 6V
ON CHARACTERISTICS (Note 13)
DC Current Gain
h
FE
180 300 500
⎯
I
C
= 100mA, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
375 mV
I
C
= 750mA, I
B
= 15mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
1200 mV
I
C
= 750mA, I
B
= 15mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
9 20 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
265
⎯
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
Delay Time
t
d
⎯
10
⎯
ns
V
CC
= 10V, I
C
= 1A
I
B1
= -I
B2
= 50mA
Rise Time
t
r
⎯
12
⎯
ns
Storage Time
t
s
⎯
185
⎯
ns
Fall Time
t
f
⎯
45
⎯
ns
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-40 -
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEV
-40 -
⎯
V
I
C
= -1
μA, 0.25V < V
BE
< 1.0V
Collector-Emitter Breakdown Voltage (Note 13)
BV
CEO
-30 -
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.3
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
<-1 -20 nA
V
CB
= -32V
Collector Cutoff Current
I
CES/R
⎯
<-1 -20 nA
V
CE
= -16V, R
≤ 1kΩ
Emitter Cutoff Current
I
EBO
⎯
<-1 -20 nA
V
EB
= -6V
ON CHARACTERISTICS (Note 13)
DC Current Gain
h
FE
180 300 500
⎯
I
C
= -100mA, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
-375 mV
I
C
= -750mA, I
B
= -15mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
-1200 mV
I
C
= -750mA, I
B
= -15mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
9 20 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
195
⎯
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Delay Time
t
d
⎯
16
⎯
ns
V
CC
= -10V, I
C
= -1A
I
B1
= -I
B2
= -50mA
Rise Time
t
r
⎯
11
⎯
ns
Storage Time
t
s
⎯
220
⎯
ns
Fall Time
t
f
⎯
31
⎯
ns
Notes:
13. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.