Diodes ZXTC6719MC - Manual (Page 3)

ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
3 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
Thermal Characteristics
0.1 1 10 100
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
100m 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1 1 10 100
0.01
0.1
1
10
8sqcm 2oz Cu
One active die
100us
100ms
1s
V
CE(SAT)
Limited
1ms
NPN Safe Operating Area
Single Pulse, T
amb
=25°C
DC
10ms
I C
Col
le
ct
or
Curr
ent
(A
)
V
CE
Collector-Emitter Voltage (V)
10sqcm 1oz Cu
One active die
10sqcm 1oz Cu
Two active die
8sqcm 2oz Cu
One active die
Derating Curve
M
a
x
P
o
wer
Di
s
s
ipat
io
n (W)
Temperature (°C)
8sqcm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
T
herm
a
l R
e
si
s
ta
n
ce (°
C
/W
)
Pulse Width (s)
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
Once active die
2oz Cu
Two active die
Thermal Resistance v Board Area
Th
erm
a
l R
e
sistance
(°
C
/W
)
Board Cu Area (sqcm)
1oz Cu
One active die
1oz Cu
Two active die
2oz Cu
One active die
2oz Cu
Two active die T
amb
=25°C
T
j max
=150°C
Continuous
Power Dissipation v Board Area
P
D
Di
s
s
ipat
ion
(W)
Board Cu Area (sqcm)
8sqcm 2oz Cu
One active die
100us
1ms
10ms
100ms
1s
DC
Single Pulse, T
amb
=25°C
V
CE(SAT)
Limited
PNP Safe Operating Area
-I
C
Col
le
ct
or
Cur
rent
(A
)
-V
CE
Collector-Emitter Voltage (V)