Diodes ZXTD2090E6 - Manual (Page 4)

ZXTD2090E6
Document number DS31896 Rev. 3 - 2
4 of 7
www.diodes.com
April 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD2090DE6
Electrical Characteristics - Q1 & Q2 common
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 12) BV
CEO
50 V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
10 nA V
CB
= 40V
Collector-Emitter Cutoff Current I
CES
10 nA V
CES
= 40V
Emitter Cutoff Current I
EBO
10 nA V
EB
= 5.6V
DC Current Gain (Note 12) h
FE
200
300
200
75
20
420
450
350
130
60
I
C
= 10mA, V
CE
= 2V
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 1.5A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 12) V
CE(sat)
24
60
120
160
35
80
200
270
mV
I
C
= 100mA, I
B
= 10mA
I
C
= 250mA, I
B
= 10mA
I
C
= 500mA, I
B
= 10mA
I
C
= 1A, I
B
= 50mA
Base-Emitter Saturation Voltage (Note 12) V
BE(sat)
940 1100 mV I
C
= 1A, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 12) V
BE(on)
850 1100 mV I
C
= 1A, V
CE
= 2V
Output Capacitance C
obo
10 pF V
CB
= 10V. f = 1MHz
Current Gain-Bandwidth Product f
T
215 MHz
V
CE
= 10V, I
C
= 50mA
f = 100MHz
Turn-On Time t
on
150 ns V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 100mA Turn-Off Time t
off
425 ns
Note: 12. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%