Zxtd619mc, Maximum ratings, Thermal characteristics – Diodes ZXTD619MC User Manual
Page 2
ZXTD619MC
Document Number DS31932 Rev. 3 - 2
2 of 7
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTD619MC
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
7 V
Peak Pulse Current
I
CM
6 A
Continuous Collector Current (Note 4 and 7)
I
C
4 A
Base Current
I
B
1 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
P
D
1.5
12
W
mW/
°C
(Notes 5 & 7)
2.45
19.6
(Notes 6 & 7)
1.13
8
(Notes 6 & 8)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
R
θJA
83.3
°C/W
(Notes 5 & 7)
51.0
(Notes 6 & 7)
111
(Notes 6 & 8)
73.5
Thermal Resistance, Junction to Lead
(Notes 7 & 9)
R
θJL
17.1
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
4. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).