Diodes ZXTN25040DFH - Manual (Page 4)

ZXTN25040DFH
Document number: DS33697 Rev. 2 - 2
4 of 7
www.diodes.com
January 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
130 170 - V I
C
= 100µA
Collector-emitter breakdown voltage
(forward blocking)
BV
CEX
130 170 - V
I
C
= 100µA; R
BE
< 1k Ω or
-1V < V
BE
< 0.25V
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
BV CEO
40 63 - V I C = 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.3 - V I
E
= 100µA
Emitter-collector breakdown voltage
(reverse blocking)
BV
ECX
6 7.4 - V
I
E
= 100µA; R
BC
< 1k Ω or
-0.25V < V
BC
< 0.25V
Emitter-collector breakdown voltage
(base open)
BV
ECO
6 7.4 - V I
E
= 100µA;
Collector-base Cut-off Current I
CBO
-
<1
-
50
20 nA
µA V CB = 100V
V
CB
= 100V, T
A
= 100°C
Collector-emitter Cut-off Current I
CEX
- - 100 nA
V
CE
= 100V; R
BE
< 1k Ω or
-1V < V
BE
< 0.25V
Emitter-base Cut-off Current I
EBO
- <1 50 nA V
EB
= 5.6V
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio h FE
300
300
30
-
450
450
60
10
900
-
-
-
-
I
C
= 10mA, V
CE
= 2V
I C = 1A, V CE = 2V
I C = 4A, V CE = 2V
I
C
= 10A, V
CE
= 2V
Collector-Emitter Saturation Voltage V
CE(sat)
-
45
120
135
140
55
210
210
190
mV
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 40mA
I
C
= 4A, I
B
= 400mA
Base-Emitter Saturation Voltage V
BE(sat)
- 960 1050 mV I
C
= 4A, I
B
= 400mA
Base-Emitter On Voltage V
BE(on)
- 840 950 mV I
C
= 4A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS (Note 9)
Transition Frequency f
T
- 190 - MHz
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
Collector Output Capacitance C
obo
- 11.7 20 pF V
CB
= 10V, f = 1MHz
Delay time t
d
- 64 - ns
V CC = 10V,
I
C
= 1A,
I
B1
= I
B2
= 10mA
Rise time t
r
- 108 - ns
Storage time t
s
- 428 - ns
Fall time t f
- 130 - ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%