Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25050DFH User Manual
Page 4
ZXTN25050DFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown voltage BV
CBO
150
180
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150
180
V
I
C
= 100
A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
50
67
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
5
8
V
I
E
= 100
A, R
BC
Յ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
5
7.4
V
I
E
= 100
A,
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 150V
V
CB
= 150V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= 150V; R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
50
60
mV
I
C
= 1A, I
B
= 100mA
160
260
mV
I
C
= 1A, I
B
= 10mA
180
250
mV
I
C
= 2A, I
B
= 40mA
190
235
mV
I
C
= 3,5A, I
B
= 175mA
160
210
mV
I
C
= 4A, I
B
= 400mA
Base-emitter saturation
voltage
V
BE(sat)
970
1070
mV
I
C
= 4A, I
B
= 400mA
Base-emitter turn-on voltage
V
BE(on)
870
970
mV
I
C
= 4A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
240
410
I
C
= 1A, V
CE
= 2V
20
40
I
C
= 4A, V
CE
= 2V
Transition frequency
f
T
200
MHz I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
12
20
pF
V
CB
= 10V, f
Delay time
t
(d)
65
ns
V
CC
= 10V. I
C
= 1A,
I
B1
= I
B2
= 10mA.
Rise time
t
(r)
111
ns
Storage time
t
(s)
429
ns
Fall time
t
(f)
140
ns