Zdt6753 – Diodes ZDT6753 User Manual
Page 2
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-100
V
I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cutoff
Current
I
CBO
-0.1
-10
µ
A
µ
A
V
CB
=-100V
V
CB
=-100V,
T
amb
=100°C
Emitter Cutoff Current I
EBO
-0.1
µ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.17
-0.30
-0.3
-0.5
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.90
-1.25
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-0.8
-1.0
V
I
C
=-1A, V
CE
=-2V*
Static Forward
Current Transfer Ratio
h
FE
70
100
55
25
200
200
170
55
300
I
C
=-50mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency
f
T
100
140
MHz
I
C
=-100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
30
pF
V
CE
=-10V, f=1MHz
Switching Times
t
on
40
ns
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=50mA
t
off
600
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FZT753 datasheet.
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
V
I
C
=100
µ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
100
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A, I
C
=0
Collector Cutoff
Current
I
CBO
0.1
10
µ
A
µ
A
V
CB
=100V
V
CB
=100V,
T
amb
=100°C
Emitter Cutoff Current I
EBO
0.1
µ
A
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.13
0.23
0.3
0.5
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
V
I
C
=1A, I
B
=100mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
V
I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer Ratio
h
FE
70
100
55
25
200
200
110
55
300
I
C
=50mA, V
CE
=2V
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency
f
T
140
175
MHz
I
C
=100mA, V
CE
=5V
f=100MHz
Output Capacitance
C
obo
30
pF
V
CB
=10V, f=1MHz
Switching Times
t
on
80
ns
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=50mA
t
off
1200
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see FZT653 datasheet.
ZDT6753
ZDT6753
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