Diodes ZTX453 User Manual

Npn silicon planar medium power transistors, Typical characteristics

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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS

ISSUE 2 – MARCH 1994
FEATURES
* 100 Volt V

CEO

* 1 Amp continuous current
* P

tot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX452

ZTX453

UNIT

Collector-Base Voltage

V

CBO

100

120

V

Collector-Emitter Voltage

V

CEO

80

100

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

2

A

Continuous Collector Current

I

C

1

A

Power Dissipation at T

amb

=25°C

P

tot

1

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

ZTX452

ZTX453

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

100

120

V

I

C

=100

µ

A

Collector-Emitter

Sustaining Voltage

V

CEO(sus)

80

100

V

I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5

5

V

I

E

=100

µ

A

Collector Cut-Off

Current

I

CBO

0.1

0.1

µ

A

µ

A

V

CB

=80V

V

CB

=100V

Emitter Cut-Off

Current

I

EBO

0.1

0.1

µ

A

V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.7

0.7

V

I

C

=150mA, I

B

=15mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.3

1.3

V

I

C

=150mA, I

B

=15mA*

Static Forward

Current Transfer

Ratio

h

FE

40

10

150

40

10

200

I

C

=150mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

Transition

Frequency

f

T

150

150

MHz

I

C

=50mA, V

CE

=10V

f=100MHz

Output Capacitance

C

obo

15

15

pF

V

CB

=10V, f=1MHz

E-Line

TO92 Compatible

ZTX452

ZTX453

3-177

C

B

E

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

CE

(sa

t)

- (V

olts)

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

V

B

E

- (

V

olts)

0.6

0.8

1.0

1.2

1.4

0.001

0.01

10

0.1

1

I

C

- Co

lle

c

to

r Cur

re

n

t (

Am

ps)

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

0.1

100

1

10

0.01

0.1

1

10

Single Pulse Test at T

amb

=25°C

ZTX452

D.C.
1s
100ms
10ms

1.0ms
300µs
100µs

I

C

-

Collector Current (Amps)

h

FE

v I

C

h

F

E

- Normalised

G

a

in (

%

)

0.001

0.01

10

0.1

1

20

40

60

80

100

0

0.01

1

0.1

I

C

/I

B

=10

10

0.2

0.4

0.6

0.8

I

C

-

Collector Current (Amps)

V

BE(sat)

v I

C

V

BE

(s

at

)

- (V

olts)

0.4

0.01

1

0.1

0.6

I

C

/I

B

=10

10

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

V

CE

=10V

ZTX453

V

CE

=10V

ZTX452

ZTX453

3-178

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