Diodes ZTX553 - Manual

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX552 ZTX553 UNIT
Collector-Base Voltage V
CBO
-100 -120 V
Collector-Emitter Voltage V
CEO
-80 -100 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation: at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j:
T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-100 -120 V I
C
=-100 µ A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-80 -100 V I
C
=-10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -5 V I
E
=-100 µ A
Collector Cut-Off
Current
I
CBO
-0.1
-0.1
µ A V
CB
=-80V
V
CB
=-100V
Emitter Cut-Off Current I
EBO
-0.1 -0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.25 -0.25 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1 -1.1 V I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Turn-onn Voltage
V
BE(on)
-1.0 -1.0 V I
C
=-150mA, V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
40
10
150 40
10
200 I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition Frequency f
T
150 150 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
12 12 MHz V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
E-Line
TO92 Compatible
ZTX552
ZTX553
3-196
C
B
E
TYPICAL CHARACTERISTICS
V CE(sat) v I C
I C - Collector Current (Amps)
V
C
E (s
at)
-
(V
olts)
I C - Collector Current (Amps) I C - Collector Current (Amps)
h FE v I C V BE(sat) v I C
I C - Collector Current (Amps)
V BE(on) v I C
h FE
- Normalised Gain (%) V
BE
(s
a t)
- (V
olts)
V
B
E
- (
V
olts)
I C
- Collector Current (Amps)
V CE - Collector Voltage (Volts)
Safe Operating Area
-0.1 -100 -1 -10
-0.01
-0.1
-1
-10
Single Pulse Test at T amb =25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
-0.001 -0.01 -10 -0.1 -1
20
40
60
80
100
-0.2
-0.001 -0.1 -1
-0.4
-0.6
-1.0
0 -0.001 -0.01 -1 -0.1
-0.2
-0.4
-0.6
-0.8
V CE =-10V
I C /I B =10
I C /I B =10
Switching Speeds
I C - Collector Current (Amps)
Swi
tching
t
im
e
-0.1 -1
I B1 =I B2 =I C /10
-0.01
ts
tf
td
tr
3
2
1
0
ts
µS
td
ns
60
40
20
80
100
0
tr
ns
120
80
40
160
200
0
600
400
200
0
tf
nS
100
-0.01
-0.0001 -0.001 -1 -0.01 -0.1
-0.6
-0.8
-1.0
-1.2
V CE =-10V
-0.4
-0.8
ZTX552
ZTX553
ZTX552
ZTX553
3-197