Diodes ZUMT591 User Manual
Zumt591
SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
*
Extremely low saturation voltage
*
500mW power dissipation
*
1 Amp continuous collector current (I
C
)
APPLICATIONS
*
Ideally suited for space / weight critical applications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
µA, I
E
=-0
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
-60
V
I
C
=-10mA*, I
B
=-0
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
µA, I
C
=-0
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-60V
Collector Cut-Off Current
I
CES
-100
nA
VCE=-60V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V, I
C
=-0
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.3
-0.6
V
V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.2
V
I
C
=-1A, I
B
=-100mA*
Base-Emitter
Turn On Voltage
V
BE(on)
-1.0
V
IC=-1A, V
CE
=-5V*
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle®2%
SOT323
ZUMT591
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Static Forward Current
Transfer Ratio
h
FE
100
100
80
15
300
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition Frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V*
f=100MHz
Ouput Capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle®2%
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
ZUMT591
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
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Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Corporate Headquarters
Zetex Semiconductors plc
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United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used,
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S E M I C O N D U C T O R S