Diodes ZX5T1951G - Manual (Page 4)

ZX5T1951G
Datasheet Number: DS35304 Rev. 4 - 2
4 of 7
www.diodes.com
April 2011
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A Product Line of
Diodes Incorporated
ZX5T1951G
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-90 -120 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage BV
CES
-90 -120 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 6) BV CEO
-60 -80 - V I
C = -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8 - V I
E
= -100µA
Collector-Base Cutoff Current I
CBO
- <1 -50 nA V
CB
= -72V
Collector-Emitter Cutoff Current I
CES
- <1 -50 nA V
CB
= -72V
Emitter Cutoff Current I
EBO
- <1 -10 nA V
EB
= -6V
Static Forward Current Transfer Ratio (Note 6) h
FE
100 240 -
-
I
C
= -10mA, V
CE
= -2V
100 180 300 I
C
= -2A, V
CE
= -2V
40 70 - I
C
= -5A, V
CE
= -2V
5 14 - I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage (Note 6) V
CE(sat)
- -16 -30
mV
I
C
= -100mA, I
B
= -10mA
- -55 -95 I C = -1A, I B = -100mA
- -85 -130 I
C
= -2A, I
B
= -200mA
- -200 -260 I
C
= -5A, I
B
= -500mA
Base-Emitter Saturation Voltage (Note 6) V BE(sat)
- -1 -1.15 V I C = -5A, I B = -500mV
Base-Emitter Turn-On Voltage (Note 6) V
BE(on)
- -0.89 -1.0 V I
C
= -5A, V
CE
= -2V
Output Capacitance (Note 6) C
obo
- 33 70 pF V
CB
= -10V. f = 1MHz
Transition Frequency f T
- 120 - MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
Switching Time
t
on
- 33 80
ns
V
CC
= -10V, I
C
= -2A
I
B1
= -I
B2
= -200mA t
off - 215 300
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%