Zxtn2010g, Thermal resistance, Absolute maximum ratings – Diodes ZXTN2010G User Manual
Page 2
ZXTN2010G
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2006
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
⍜JA
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
60
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
6
A
Peak pulse current
I
CM
20
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
3.0
24
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS