Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19100CZ User Manual
Page 5
ZXTN19100CZ
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-Base breakdown
voltage
BV
CBO
200
240
V
I
C
= 100
μA
Collector-Emitter
breakdown voltage
(forward blocking)
BV
CEX
200
240
V
I
C
= 100
μA, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Collector-Emitter
breakdown voltage
BV
CEO
100
120
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECX
6
8.3
V
I
E
= 100
μA, R
BC
≤
1k
Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
BV
ECO
5
8
V
I
E
= 100
μA
Emitter-Base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
μA
Collector-Base cut-off
current
I
CBO
<1
50
0.5
nA
μA
V
CB
= 200V
V
CB
= 200V, T
amb
=100°C
Collector-Emitter cut-off
current
I
CEX
100
nA
V
CE
= 200V, R
BE
≤
1k
Ω or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-Emitter
saturation voltage
V
CE(sat)
50
105
210
65
140
350
mV
mV
mV
I
C
= 1A, I
B
= 100mA
(*)
I
C
= 1A, I
B
= 20mA
(*)
I
C
= 5.25A, I
B
= 525mA
(*)
Base-Emitter saturation
voltage
V
BE(sat)
1000
1075
mV
I
C
= 5.25A, I
B
= 525mA
(*)
Base-Emitter turn-on
voltage
V
BE(on)
930
1025
mV
I
C
= 5.25A, V
CE
= 2V
(*)
Static forward current
transfer ratio
h
FE
200
130
300
200
30
500
I
C
= 100mA, V
CE
= 2V
(*)
I
C
= 1A, V
CE
= 2V
(*)
I
C
= 5.25A, V
CE
= 2V
(*)
Transition frequency
f
T
150
MHz
I
C
= 50mA, V
CE
= 10V
f
= 100MHz
Input capacitance
C
ibo
305
400
pF
V
EB
= 0.5V, f
= 1MHz
(*)
Output capacitance
C
obo
15.7
25
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
d
28.3
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= -I
B2
= 50mA
Rise time
t
r
23.6
ns
Storage time
t
s
962
ns
Fall time
t
f
133
ns