Diodes ZXTN2011G - Manual (Page 4)

ZXTN2011G
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2006
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
200 235 V I
C
=100 ␮A
Collector-emitter breakdown voltage BV
CER
200 235 V I
C
=1 ␮A, RBՅ1k⍀
Collector-emitter breakdown voltage BV
CEO
100 115 V I
C
=10mA*
Emitter-base breakdown voltage BV
EBO
7 8.1 V I
E
=100 ␮A
Collector cut-off current I
CBO
50
0.5
nA
␮A
V
CB
=150V
V
CB
=150V,T
amb
=100 ЊC
Collector cut-off current I
CER
R Յ 1k⍀
100
0.5
nA
␮A
V
CB
=150V
V
CB
=150V,T
amb
=100 ЊC
Emitter cut-off current I
EBO
10 nA V
EB
=6V
Collector-emitter saturation voltage V
CE(SAT)
21
50
95
180
35
65
125
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-emitter saturation voltage V
BE(SAT)
1020 1120 mV I
C
=5A, I
B
=500mA*
Base-emitter turn-on voltage V
BE(ON)
920 1000 mV I
C
=5A, V
CE
=2V*
Static forward current transfer ratio H
FE
100
100
30
10
230
200
60
20
300
I
C
=10mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition frequency f
T
130 MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance C
OBO
26 pF V
CB
=10V, f=1MHz*
Switching times t
ON
t
OFF
41
1010
ns I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.