Diodes ZXTN2010Z - Manual (Page 2)

ZXTN2010Z
Da
tasheet Number: DS33661 Rev. 4 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
ZXTN2010Z
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V CEO
60 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I C
5 A
Peak Pulse Current I
CM
20 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear derating factor
P D
1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear derating factor
P
D
2.1
16.8
W
mW/°C 
Thermal Resistance, Junction to Ambient (Note 6) R θJA 83 °C/W

Thermal Resistance, Junction to Ambient (Note 7) R θJA 60 °C/W
Thermal Resistance, Junction to Leads (Note 8) R θJL 3.23 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.