Diodes ZXTN2020F - Manual (Page 4)

ZXTN2020F
Issue 4 - January 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
160 200 V I
C
=100
µA
Collector-emitter breakdown
voltage V
(BR)CEV
160 200 V I
C
=1
µA, -1V< V
BE
<+0.3V
Collector-emitter breakdown
voltage V
(BR)CEO
100 115 V
I
C
=10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300
␮
S. Duty cycle
Յ
2%.
Emitter-base breakdown
voltage V
(BR)EBO
7 8 V I
E
=100
µA
Collector-emitter cut-off
current I
CEV
<1 20 nA V
CES
=128V,
V
BE
= -1V
Collector-base cut-off
current I
CBO
<1 20 nA V
CB
=128V
Emitter-base cut-off current I
EBO
<1 10 nA V
EB
=6V
Static forward current
transfer ratio H
FE
100
100
35
220
200
60
13
300
I
C
=10mA, V
CE
=2V
(a)
I
C
=1A, V
CE
=2V
(a)
I
C
=4A, V
CE
=2V
(a)
I
C
=10A, V
CE
=2V
(a)
Collector-emitter saturation
voltage V
CE(sat)
20
40
85
120
30
50
105
150
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA
(a)
I
C
=1A, I
B
=100mA
(a)
I
C
=2A, I
B
=100mA
(a)
I
C
=4A, I
B
=400mA
(a)
Base-emitter saturation
voltage V
BE(sat)
0.94 1.05 V
I
C
=4A, I
B
=400mA
(a)
Base-emitter turn-on voltage V
BE(on)
0.84 0.94 V
I
C
=4A, V
CE
=2V
(a)
Transition frequency f
T
130 MHz Ic=100mA, V
CE
=10V,
f=50MHz
Output capacitance C
obo
22 pF V
CB
=10V, f=1MHz
Turn–on time t
(on)
37 ns V
CC
=10V, I
C
=1A,
Turn-off time t
(off)
910 ns I
B1
=I
B2
=100mA