Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25060BFH User Manual
Page 4
ZXTN25060BFH
© Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
150
190
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150
190
I
C
= 100
A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
60
80
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector
breakdown voltage (reverse
blocking)
BV
ECX
6
8
V
I
E
= 100
A, R
BC
Յ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector
breakdown voltage (base
open)
BV
ECO
6
7
V
I
E
= 100
A,
Emitter-base breakdown
voltage
BV
EBO
7
8
V
I
E
= 100
A
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 120V
V
CB
= 120V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= 120V; R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
33
40
mV
I
C
= 0,5A, I
B
= 50mA
73
95
mV
I
C
= 0,5A, I
B
= 10mA
50
65
mV
I
C
= 1A, I
B
= 100mA
150
175
mV
I
C
= 3.5A, I
B
= 350mA
Base-emitter saturation
voltage
V
BE(sat)
960
1050
mV
I
C
= 3.5A, I
B
= 350mA
Base-emitter turn-on
voltage
V
BE(on)
865
950
mV
I
C
= 3.5A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
100
200
300
I
C
= 10mA, V
CE
90
180
I
C
= 1A, V
CE
25
40
I
C
= 3.5A, V
CE
= 2V
Transition frequency
f
T
185
MHz
I
C
= 100mA, V
CE
= 5V
f
= 100MHz
Output capacitance
C
OBO
11.5
20
pF
V
CB
= 10V, f
Turn-on time
t
(on)
34
ns
V
CC
= 10V. I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Turn-off time
t
(off)
566
ns