Diodes ZXTN25100BFH - Manual (Page 4)

ZXTN25100BFH
Document number: DS33703 Rev. 2 - 2
4 of 7
www.diodes.com
December 2012
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A Product Line of
Diodes Incorporated
ZXTN25100BFH
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
170 220 - V I
C
= 100µA
Collector-Emitter Breakdown Voltage
(Forward Blocking) (Note 11)
BV
CEX
170 210 - V
I
C
= 100µA, R
BE
< 1k Ω or
-1V < V
BE
< 0.25V
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
100 120 - V I
C
= 1mA
Emitter-Collector Breakdown Voltage
(Reverse Blocking) (Note 11)
BV
ECX
6 7 - V
I
E
= 100µA, R
BC
< 1k Ω or
0.25V > V
BC
> -0.25V
Emitter-Collector Breakdown Voltage BV
ECO
6 8.4 - V I
E
= 100µA
Emitter-Base Breakdown Voltage BV
EBO
7 8 - V I
E
= 100µA
Collector Cut-off Current I
CBO
- <1 50
20
nA
V
CB
= 136V
V
CB
= 136V, T
A
= +100°C
Collector Emitter Cut-off Current I
CEX
- - 100 nA
V
CE
= 136V, R
BE
< 1k Ω or
-1V < V
BE
< 0.25V
Emitter Cut-off Current I
EBO
- <1 50 nA V
EB
= 5.6V
Static Forward Current Transfer Ratio (Note 11) h
FE
100
50
-
200
85
20
300
-
- -
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 3A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 11) V
CE(sat)
-
-
-
- 40
100
70
200
55
135
80
250
mV
I
C
= 0.5A, I
B
= 50mA
I
C
= 0.5A, I
B
= 10mA
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
- 940 1050 mV I
C
= 3A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 11) V
BE(on)
- 890 1000 mV I
C
= 3A, V
CE
= 2V
Transition Frequency f
T
- 160 - MHz
I
C
= 100mA, V
CE
= 5V,
f = 100MHz
Collector Output Capacitance C
obo
- 9.4 20 pF V
CB
= 10V, f = 1MHz
Delay Time t
(d)
- 16 - ns
V
CC
= 10V, I
C
= 0.5A,
I
B1
= -I
B2
= 50mA
Rise Time t
(r)
- 55 - ns
Storage Time t
(s)
- 677 - ns
Fall Time t
(f)
- 95 - ns
Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%