Diodes ZXTN25060BZ - Manual (Page 2)

ZXTN25060BZ
Issue 3 - January 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
150 V
Collector-emitter voltage (forward blocking) V
CEX
150 V
Collector-emitter voltage V
CEO
60 V
Emitter-collector voltage (reverse blocking) V
ECO
6 V
Emitter-base voltage V
EBO
7 V
Continuous collector current (c) I
C
5 A
Base current I
B
1 A
Peak pulse current I
CM
10 A
Power dissipation at T
amb
= 25°C (a) P
D
1.1 W
Linear derating factor 8.8 mW/°C
Power dissipation at T
amb
= 25°C (b) P
D
1.8 W
Linear derating factor 14.4 mW/°C
Power dissipation at T
amb
= 25°C (c) P
D
2.4 W
Linear derating factor 19.2 mW/°C
Power dissipation at T
amb
= 25°C (d) P
D
4.46 W
Linear derating factor 35.7 mW/°C
Operating and storage temperature range T
j
, T
stg
- 55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 117 °C/W
Junction to ambient (b) R
⍜JA
68 °C/W
Junction to ambient (c) R ⍜JA 51 °C/W
Junction to ambient (d) R
⍜JA
28 °C/W