Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN25100DFH User Manual
Page 4
ZXTN25100DFH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
180
220
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
180
220
V
I
C
= 100
A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
100
130
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.2
V
I
E
= 100
A, R
BC
Յ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
6
8.7
V
I
E
= 100
A,
Collector-base cut-off current I
CBO
<1
50
0.5
nA
A
V
CB
= 180V
V
CB
= 180V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
-
100
nA
V
CE
= 144V; R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
120
170
mV
I
C
= 0.5A, I
B
= 10mA
80
95
mV
I
C
= 1A, I
B
= 100mA
215
330
mV
I
C
= 2.5A, I
B
= 250mA
Base-emitter saturation
voltage
V
BE(sat)
910
1000
mV
I
C
= 2.5A, I
B
= 250mA
Base-emitter turn-on voltage
V
BE(on)
860
950
mV
I
C
= 2.5A, V
CE
= 2V
Static forward current
transfer ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
120
170
I
C
= 0.5A, V
CE
= 2V
40
60
I
C
= 1A, V
CE
20
I
C
= 2.5A, V
CE
= 2V
Transition frequency
f
T
175
MHz I
C
= 100mA, V
CE
= 10V
f
= 100MHz
Output capacitance
C
OBO
8.7
15
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
16.4
ns
V
CC
= 10V.
I
C
= 500mA,
I
B1
= I
B2
= 50mA.
Rise time
t
r
115
ns
Storage time
t
s
763
ns
Fall time
t
f
158
ns